Enhanced thermoelectric performance of Hafnium free n-type ZrNiSn half-Heusler alloys by isoelectronic Si substitution

被引：0
|
作者：
Zhang, Q. [1 ]
Xie, P. [1 ]
Liu, C. [2 ]
Li, S. [1 ]
Lei, X. [1 ]
Huang, L. [1 ]
Yuan, G. [1 ]
Cai, F. [1 ]
机构：
[1] School of Materials Science & Engineering, Xihua University, Chengdu,610039, China
[2] Xihua Honor College, Xihua University, Chengdu,610039, China
来源：
Materials Today Physics | 2022年 / 24卷
关键词：
Electronic structure;
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