Effect of High-Temperature Oxidation on Phase Structure and Flexural Strength of Si3N4-SiC Ceramics

被引：0

作者：

Zhou W. ^{[1
]}

Ma J. ^{[2
]}

Gao X. ^{[1
]}

Liu H. ^{[1
]}

Shan Z. ^{[1
]}

Feng W. ^{[2
,3
]}

Zhang B. ^{[1
]}

机构：

[1] School of Material Science and Engineering, University of Science and Technology Beijing, Beijing

[2] Huludao Huaneng Industrial Ceramics Co., Ltd., Huludao

[3] Beijing Ollie Tonglian Technology Co., Ltd., Beijing

来源：

Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | 2022年 / 50卷 / 08期

关键词：

Flexural strength; High-temperature oxidation; Silicon carbide; Silicon nitride;

D O I：

10.14062/j.issn.0454-5648.20220112

中图分类号：

学科分类号：

摘要：

Si3N4-SiC ceramics were prepared via reaction sintering with SiC, silicon powder and SiO2 as main raw materials, and the ceramics were oxidized at a high temperature. The structure and properties of ceramics before and after high-temperature oxidation were investigated. The results show that the main crystalline phases of the samples before high-temperature oxidation are SiC, α-Si3N4/β-Si3N4 and a small amount of silicon powder, Si2N2O and triclinic-SiO2, while the silicon powder disappears after high-temperature oxidation and forms tetragonal-SiO2. The mass fraction of β-Si3N4 remains constant, and the mass fraction of α-Si3N4 decreases from 11.3% before high-temperature oxidation to 6.8% after high-temperature oxidation, while the mass fraction of Si2N2O and SiO2 increases, indicating that α-Si3N4 can be decomposed into Si2N2O and SiO2 more easily than β-Si3N4. After high-temperature oxidation, the flexural strength of samples decreases from (68.55±6.36) MPa to (49.80±4.96) MPa mainly due to the decomposition of α-Si3N4 into Si2N2O and SiO2. © 2022, Editorial Department of Journal of the Chinese Ceramic Society. All right reserved.

引用

页码：2104 / 2109

页数：5

共 24 条

[21]

MA S Y, ZHANG B R, QIN G G, Et al., Effects of γ-ray irradiation on photoluminescence spectra from Si-rich silicon oxide, Mater Res Bull, 32, 10, pp. 1427-1433, (1997)

[22]

PARK N M, JEON S H, YANG H D, Et al., Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride, Appl Phys Lett, 83, 5, pp. 1014-1016, (2003)

[23]

LONG Menglong, Synthesis Mechanism and Application Properties of High Performance Si<sub>3</sub>N<sub>4</sub>-SiC Refractory, (2019)

[24]

WANG Shenghong, ZHANG Yingcai, HAN Wencheng, Et al., Powd Metal Ind, 5, pp. 1-5, (2004)

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