Effect of Trace-Oxide on H-Se Impurity in Se-Based Chalcogenide Glasses

被引:0
|
作者
Wang Y. [1 ,3 ]
Wang J. [1 ,3 ]
Jiao K. [1 ,3 ]
Liang X. [1 ,3 ]
Sun W. [1 ,3 ]
Bai S. [1 ,3 ]
Zhao Z. [2 ]
Dai S. [1 ,3 ]
Wang X. [1 ,3 ]
机构
[1] Laboratory of Infrared Materials and Devices, Research Institute of Advanced Technology, College of Information, Ningbo University, Ningbo
[2] College of Data Science, Jiaxing University, Jiaxing
[3] Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo
关键词
Chalcogenide glass; Impurity; Optical transmission spectrum; Seleniumdioxide;
D O I
10.14062/j.issn.0454-5648.20211026
中图分类号
学科分类号
摘要
Chalcogenide glasses can be melted in a completely oxygen-free environment, but the effect of trace amount of oxygen on the specific properties of chalcogenide glasses is still a challenge. To investigate the effect of trace-oxide components of Se-H impurities in As-Se glass system, SeO2 and Ge were introduced for H and O impurities in the multi-processes of dynamic-vacuum distillation. The results indicate that the co-doping of SeO2 (i.e., 2×10-3) can lead to the decrease of Se-H content in As2Se3 bulk glasses, although As-Oand Se-O impurities increase. When the content of SeO2 increases to 10-2, the absorbing intensities of As-Oand Se-O impurities increase. For the preparation of Ge-As-Se glass with low Se-H impurities, the more content of SeO2 is needed. The introduction of Ge can weaken the efficiency of SeO2 for eliminating Se-H impurities. If the Se-H impurities decrease to beyond a detecting limit of the FTIR in Ge-As-Se glasses, the more content of SeO2 is needed for the compensation. This work provides a method for further clarifying the sources of impurities in chalcogenide glasses and the preparation of low-hydroxy chalcogenide glass fibers. © 2022, Editorial Department of Journal of the Chinese Ceramic Society. All right reserved.
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页码:943 / 949
页数:6
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