Analysis and Research on Energy Loss of Aluminum Nitride Lamb Wave Resonators

被引:0
作者
Zhao J.-C. [1 ,2 ]
Lü S.-T. [1 ,2 ]
Zhang A.-Y. [1 ,2 ]
Song C.-G. [3 ]
Sun H.-Y. [1 ,2 ]
机构
[1] Jiangsu Key Laboratory of ASIC Design, Nantong University, Jiangsu, Nantong
[2] School of Information Science and Technology, Nantong University, Jiangsu, Nantong
[3] School of Electrical Engineering, Nantong University, Jiangsu, Nantong
来源
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2023年 / 51卷 / 01期
基金
中国国家自然科学基金;
关键词
energy loss; Lamb wave resonator; manufacturing process; MEMS; quality factor;
D O I
10.12263/DZXB.20220897
中图分类号
学科分类号
摘要
In this paper, the structural design, micro-nano fabrication and test characterization of AlN Lamb wave resonators with operating frequencies of 400 MHz and 2 GHz were studied. The effects of anchor loss and interaction loss between phonons on the quality factor (Q value) of Lamb wave resonators were analyzed, and the main energy loss sources of Lamb wave resonators at different operating frequencies were clarified. The results show that for low-frequency resonators, the anchor loss is the main source of energy loss, so reducing the width of the support shaft can reduce the energy leaking to the substrate through the support shaft, thereby increasing the Q value. For high-frequency resonators, the loss of interaction between phonons is the main source of energy loss, so the resonator using aluminum (Al) as the interdigital electrode (IDT) material has a higher Q value than gold (Au). According to the structural characteristics of the designed Lamb wave resonators, a fabrication technology based on seven-step lithography process was designed, and the Lamb wave resonators with miniaturized release cavities were successfully fabricated with excellent performance. The test results show that the series quality factors (Qs) of Al-IDT resonators operating at 400 MHz and 2 GHz reach 2 590 and 1 192, respectively. © 2023 Chinese Institute of Electronics. All rights reserved.
引用
收藏
页码:222 / 230
页数:8
相关论文
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