Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary

被引：0
|
作者：
Wang, Jing [1 ,2 ]
Zhu, Ruixue [3 ]
Ma, Ji [2 ,4 ]
Yang, Huayu [1 ]
Fan, Yuanyuan [1 ]
Chen, Mingfeng [2 ]
Sun, Yuanwei [3 ]
Gao, Peng [3 ]
Huang, Houbing [1 ]
Zhang, Jinxing [5 ]
Ma, Jing [2 ]
Nan, Ce-Wen [2 ]
机构：
[1] Advanced Research Institute of Multidisciplinary Science, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing,100081, China
[2] State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing,100084, China
[3] International Center for Quantum Materials, Electron Microscopy Laboratory, School of Physics, Peking University, Beijing,100871, China
[4] School of Material Science and Engineering, Kunming University of Science and Technology, Yunnan, Kunming,650093, China
[5] Department of Physics, Beijing Normal University, Beijing,100875, China
来源：
ACS Applied Materials and Interfaces | 2022年 / 14卷 / 16期
关键词：
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摘要：
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页码：18662 / 18670
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