Growth of metastable α-ga2o3 epitaxial thin film on flexible synthetic mica by insertion α-Fe2O3 buffer layer

被引：0

作者：

Arata Y. ^{[1
]}

Nishinaka H. ^{[2
]}

Shimazoe K. ^{[1
]}

Yoshimoto M. ^{[2
]}

机构：

[1] Department of Electronics, Kyoto Institute of Technology, Sakyo-ku, Kyoto

[2] Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Sakyo-ku, Kyoto

来源：

| 1600年 / Society of Materials Science Japan卷 / 70期

关键词：

Buffer layer; Flexible; Gallium oxide; Metastable; Mist CVD; Synthetic mica;

D O I：

10.2472/jsms.70.738

中图分类号：

学科分类号：

摘要：

Metastable α-Ga2O3 thin films with a corundum structure were grown epitaxially on flexible synthetic mica. The κGa2O3 thin films were grown in a temperature range of 450-600 °C, without a buffer layer. In contrast, the α-Ga2O3 thin films were grown in a wider temperature range of 350-600 °C, by inserting corundum-structured α-Fe2O3 buffer layers. X-ray diffraction (XRD) rocking curve measurements revealed that the α-Ga2O3 thin film grown at 425 °C had the highest degree of crystallinity. Cross-sectional transmission electron microscopy (TEM) observations and an XRD φ scan revealed that the epitaxial relationship between the thin film and the substrate via the buffer layer was (0001) α-Ga2O3 [11-20] || (001) synthetic mica [100]. Furthermore, when TEM observation was performed close to the surface of the αGa2O3 thin film at a high magnification, a lattice image derived from the out-of-plane (0001)-plane orientation was observed. However, it was also revealed that the α-Ga2O3 thin films did not have a single crystal structure but rather an in-plane domain structure. By conducting selected area electron diffraction (SAED) at the interface area, it was determined that the α-Fe2O3 buffer layer was polycrystalline. This implies that α-Ga2O3 thin films were epitaxially grown while forming the in-plane domains on the polycrystalline buffer layers. The results of this study indicate the flexible applications of α-Ga2O3 thin films, which have significant potential for use as power sources and deep-ultraviolet devices. © 2021 The Society of Materials Science, Japan

引用

页码：738 / 744

页数：6

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