Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC

被引：1

作者：

Chung G. ^{[1
]}

Viveros R. ^{[1
]}

Lee C. ^{[1
]}

Soukhojak A. ^{[1
]}

Pushkarev V. ^{[1
]}

Cheng Q. ^{[2
]}

Raghothamachar B. ^{[2
]}

Dudley M. ^{[2
]}

机构：

[1] SK siltron css, 1311 Straits Dr, Bay City, 48706, MI

[2] Stony Brook University, 100 Nicolls Road, Stony Brook, 11794, NY

来源：

Defect and Diffusion Forum | 2023年 / 425卷

关键词：

4H-SiC; bar stacking fault; basal plane slip band; laser scanning; photoluminescence; X-ray topography;

D O I：

10.4028/p-35058b

中图分类号：

学科分类号：

摘要：

Correlation of X-ray topography and production line defect inspection tools has demonstrated the capability of in-line tools to differentiate between geometrically comparable basal plane slip bands (BPSB) and bar stacking faults (BSF) on 4H SiC wafers. BPSBs were found to propagate through epitaxial growth at high rates and with similar photoluminescence signatures to post-epitaxy BSFs. Molten KOH etching post-epitaxy provided evidence of distinguishing features between BPSBs and BSFs, suggesting that the defects were indeed correctly identified by in-line defect inspection tools pre-epitaxy. © 2023 Trans Tech Publications Ltd, Switzerland.

引用

页码：51 / 56

页数：5

共 6 条

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