Wafer temperature monitoring technology in integrated circuit manufacturing process

被引:0
作者
Jia J. [1 ]
Zhong Y. [1 ]
Zhang Z. [1 ]
Jiang J. [1 ]
Wang C. [1 ]
机构
[1] School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu
来源
Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument | 2021年 / 42卷 / 01期
关键词
Contact; Non-contact; Temperature monitoring; Wafer;
D O I
10.19650/j.cnki.cjsi.J2006961
中图分类号
学科分类号
摘要
With the continuous development of integrated circuits, low power consumption and small area have gradually become the important specifications in chip design, which promotes the continuous reduction in the size of the devices that constitute the circuit. In the semiconductor chip manufacturing process, smaller device size has higher requirements for temperature control accuracy in the process. The slight deviation of the wafer temperature and the temperature non-uniformity higher than 1% will directly affect the yield of the final product. In order to achieve high-precision control of temperature and temperature field distribution, more accurate pre-detection and real-time acquisition are necessary, which pushes the wafer temperature monitoring technology in the integrated circuit manufacturing come into being. Focuses on the two main directions of contact and non-contact temperature measurement technologies, introduces the principles of the temperature monitoring technologies applied in the temperature monitoring range of 0℃~1 300℃, based on the principles analyzes the advantages and drawbacks of various technologies in detail, keeps track the development status of various each temperature measurement technologies both at home and abroad, and looks forward to the future development of wafer temperature monitoring technology. © 2021, Science Press. All right reserved.
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页码:15 / 29
页数:14
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共 89 条
  • [21] HUANG P, YANG H., A design method to improve temperature uniformity on wafer for rapid thermal processing, Electronics, 7, 10, (2018)
  • [22] LIU S L, SZU-LIN L I U, HORNG J J, Et al., Integrated circuit designs based on temperature distribution determination: US10, 289, 777
  • [23] TSAI B K., A summary of lightpipe radiation thermometry research at NIST, Journal of Research of the National Institute of Standards and Technology, 111, 1, (2006)
  • [24] SCHREUTELKAMP R J, VANDENABEELE P, DEWEERDT B, Et al., In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation, Applied Physics Letters, 61, 19, pp. 2296-2298, (1992)
  • [25] TSAI B K, BODYCOMB J, DEWITT D P, Et al., Emissivity compensated pyrometry for specular silicon surfaces on the NIST RTP test bed, 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, pp. 167-172, (2004)
  • [26] HOEFFLINGER B., ITRS: The international technology roadmap for semiconductors, pp. 161-174, (2011)
  • [27] WANG L L, WANG H, SUN X, Et al., The influence of growth temperature on MOCVD epitaxial growth of InGaN, Chinese Journal of Semiconductors, 28, z1, pp. 257-259, (2007)
  • [28] ADAMS B., Temperature measurement in RTP: Past and future, 2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, pp. 117-125, (2008)
  • [29] WANG AI H, NIU Y H, LIU Y, Et al., Temperature distribution during rapid thermal processing of doped silicon silicon gate wafer, Journal of Harbin Institute of Technology, 46, 3, pp. 124-128, (2014)
  • [30] TAN W W, TANG J C, LOH A P, Et al., In situ measurement of wafer temperature using two sensors with different dynamical properties, Measurement Science and Technology, 17, 11, (2006)