Influence of Ni dopant on surface morphology of nanostructured ZnO thin films grown by SILAR method

被引：1

作者：

Sales Amalraj A. ^{[1
]}

Christina Joycee S. ^{[2
]}

Joseph Lourdu Rajah A. ^{[3
]}

机构：

[1] Department of Physics, PSNA College of Engineering and Technology, Dindigul

[2] Department of Chemistry, St. Antony’s College of Arts and Sciences for Women, Dindigul

[3] Department of English, PSNA College of Engineering and Technology, Dindigul

来源：

Materials Research Innovations | 2020年 / 24卷 / 06期

关键词：

bandgap; FTIR; nanostructures; Ni doped ZnO; SEM; SILAR; thin film; XRD;

D O I：

10.1080/14328917.2019.1683697

中图分类号：

学科分类号：

摘要：

Pure and Nickel (Ni) doped zinc oxide (ZnO) thin films with different concentrations (1%, 3% and 5%) were fabricated using one of the simplest physical deposition processes called Successive Ionic Layer Adsorption and Reaction (SILAR) method. The physico-chemical properties of the fabricated ZnO and Ni-doped ZnO thin films were characterised using different analytical tools. The crystallise size of the fabricated films was determined from the X-ray Diffraction analysis. The presence of functional groups in the materials was confirmed from the Fourier-Transform Infrared analysis. The changes in the surface morphology and roughness of the films with respect to the addition of Ni dopant as well as an increase in dopant concentration were examined from Scanning Electron Microscopy and Atomic Force Microscope. The optical bandgap energy was determined from the UV-Visible spectrometer. The chemical state and the elemental composition were evaluated using X-ray Photoelectron Spectroscopy. © 2019 Informa UK Limited, trading as Taylor & Francis Group.

引用

页码：341 / 348

页数：7

共 28 条

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