A Transparent Photodetector Based on a Composite of Silver and Tungsten Oxide Nanowires

被引:6
|
作者
Solly, Meenu Maria [1 ]
Sharma, Neha [2 ]
Swaminathan, Parasuraman [1 ]
机构
[1] IIT Madras, Electronic Materials and Thin Films Laboratory, Department of Metallurgical and Materials Engineering, The Ceramics Technol. Grp.-Ctr. of Excellence in Materials and Manufacturing for Futuristic Mobility, Chennai,600036, India
[2] IIT Madras, Electronic Materials and Thin Films Laboratory, The Organic Electronics Group, Department of Metallurgical and Materials Engineering, Department of Electrical Engineering, Chennai,600036, India
来源
关键词
Conductivity - Detectivity - Junction formation - Nanocomposite ink - Photonic bandgap (PBG) - Schottky junctions - Silver nanowires - Transparent conducting films - Transparent photodetector - Tungsten oxide nanowires;
D O I
10.1109/JFLEX.2023.3251959
中图分类号
学科分类号
摘要
This work presents the development of a transparent photodetector (PD) based on a composite of tungsten trioxide (WO3) and silver nanowires (Ag NWs). A uniform transparent conducting film with a resistance of 64 Ω and a transparency of 89% (at 550 nm) is obtained via spin coating followed by annealing at 120 °C. The device exhibits negative photoconductance, which can be attributed to the Schottky junction formation at the silver and tungsten oxide interface. The device shows a sensitivity of 25.6 mAW-1 and detectivity of 3.38×108 Jones at a low bias voltage of 1 V at room temperature. The low annealing temperature makes the composite compatible with conventional flexible substrates. © 2022 IEEE.
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页码:421 / 428
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