Study of SiC device for pulsed power switching circuit

被引：0

作者：

Tagawa T. ^{[1
]}

Yamashita T. ^{[1
]}

Sakugawa T. ^{[1
]}

Katsuki S. ^{[1
]}

Hukuda K. ^{[2
]}

Sakamoto K. ^{[2
]}

机构：

[1] Kumamoto University, 2-39-1, Kurokami, Chuo-ku, Kumamoto

[2] National Institute of Advanced Industrial Science and Technology, Tsukubanishi, 16-1, Onogawa, Tsukuba

来源：

IEEJ Transactions on Fundamentals and Materials | 2019年 / 139卷 / 08期

关键词：

MOSFET; Pulsed power; Silicon carbide;

D O I：

10.1541/ieejfms.139.345

中图分类号：

学科分类号：

摘要：

Pulsed power generator using semiconductor switches have been developed. We have developed switching module using discrete type Silicon Carbide (SiC) Device for pulsed power circuit. We compare the switching module using SiC-MOSFETs with conventional module using IGBTs. Both of switching devices the switching loss increased when the voltage get higher. The switching module using SiC-MOSFETs can input higher voltage and has less switching loss in same input voltage. Also, we have investigate the switching loss depend on di/dt at switching. The permissible di/dt of SiC-MOSFETs were higher than IGBTs. However, there is a limit to the value of permissible di/dt. The loss in this module is reduced by applying magnetic assist. The advantage of SiC-MOSFET was confirmed in switching for pulsed power. © 2019 The Institute of Electrical Engineers of Japan.

引用

页码：345 / 350

页数：5

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