A SiC double-sided stacked wire-bondless power module for high-frequency power electronic applications

被引：0

作者：

Huang S. ^{[1
]}

Chen Z. ^{[1
]}

机构：

[1] Department of Electrical Engineering, University of Arkansas, Fayetteville, AR

来源：

Journal of Microelectronics and Electronic Packaging | 2021年 / 18卷 / 03期

基金：

美国国家科学基金会;

关键词：

Double-sided stacked power module; LTCC interposer; SiC power device packaging; Wire-bondless power module;

D O I：

10.4071/IMAPS.1426127

中图分类号：

学科分类号：

摘要：

This article reports a double-sided stacked wire-bondless power module package for silicon carbide (SiC) power devices to achieve low parasitic inductance and improved thermal performance for high-frequency applications. The design, simulation, fabrication, and characterization of the power module are presented. A half-bridge module based on the SiC power MOSFETs is demonstrated with minimized parasitic inductance. Double-sided cooling paths are used to maximize heat dissipation. Besides conventional packaging materials used in the power module fabrication, a low-temperature cofired ceramic (LTCC) and nickel-plated copper balls are used in this module package. The LTCC acts as an interposer providing both electrical and thermal routings. The nickel-plated copper balls replace bond wires as the electrical interconnections for the SiC power devices. The electrical and thermo-mechanical simulations of the power module are performed, and its switching performance is evaluated experimentally. © International Microelectronics Assembly and Packaging Society

引用

页码：113 / 122

页数：9