Research on variable-voltage active drive circuit for improving SiC MOSFET switching performance

被引：0
|
作者：
Li X. [1 ]
Lu Y. [1 ]
Ni X. [1 ]
Wang S. [1 ]
Zhang Y. [1 ]
Tang X. [1 ]
机构：
[1] School of Electric Power Engineering, Nanjing Institute of Technology, Nanjing
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2022年 / 43卷 / 01期
关键词：
Active drive; Oscillation; Overshoot; Photovoltaic transformer; SiC MOSFET;
D O I：
10.19912/j.0254-0096.tynxb.2020-0102
中图分类号：
学科分类号：
摘要：
During the switching process of SiC MOSFET, the current and voltage overshoot and oscillation may occur, which can cause additional losses and damage the device. This article proposes a variable voltage active gate driver for SiC MOSFET, which can change the drive voltage of the device during the turn-on current rise and turn-off current decline stages, to suppress the current and voltage overshoot and oscillation. The experimental results show that, compared with the conventional gate driver, the proposed variable-voltage active gate drive circuit can effectively suppress the overshoot and oscillation of current and voltage during the switching process of the device. Finally, the practicability of the proposed active gate driver was verified by applying it to the photovoltaic transformers. © 2022, Solar Energy Periodical Office Co., Ltd. All right reserved.
引用
收藏
页码：362 / 368
页数：6
相关论文
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