W-band 3.4 W/mm GaN power amplifier MMIC

被引：0

作者：

Ge Q. ^{[1
]}

Xu B. ^{[1
]}

Tao H. ^{[1
]}

Wang W. ^{[1
]}

Ma X. ^{[2
]}

Guo F. ^{[1
]}

Liu Y. ^{[3
]}

机构：

[1] Nanjing Electronic Devices Institute, Nanjing

[2] School of Advanced Materials and Nanotechnology, Xidian University, Xi'an

[3] Chengdu Library and Information Center, Chinese Academy of Sciences, Chengdu

来源：

Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2020年 / 47卷 / 01期

关键词：

GaN high electron mobility transistor; Micro-strips; Monolithic microwave integrated circuit; Power amplifier; W-band;

D O I：

10.19665/j.issn1001-2400.2020.01.004

中图分类号：

学科分类号：

摘要：

A high power density monolithic microwave integrated circuit (MMIC) power amplifier is presented for W band application. The chip is fabricated using the 100 nm GaN high electron mobility transistor (HEMT) technology on a 50 μm SiC substrate. The amplifier is designed for a high gain and high output power with three stage topology and low-loss impedance matching networks designed with high and low characteristic impedance micro-strips and metal-insulator-metal (MIM) capacitors. And quarter-wave micro-strips are employed for the DC bias networks, while the power amplifier is also fully integrated with bias networks on the wafer. Measurement results show that, at the drain bias of 15 V, the amplifier MMIC achieves a typical small signal gain of 20 dB within the frequency range of 88~98 GHz. Moreover, the saturated output power is more than 250 mW at the continuous-wave mode. At 98 GHz, a peak output power of 405 mW has been achieved with an associated power gain of 13 dB and a power-added-efficiency of 14.4%. Thus, this GaN MMIC delivers a corresponding peak power density of 3. 4 W/mm at the W band. © 2020, The Editorial Board of Journal of Xidian University. All right reserved.

引用

页码：24 / 29

页数：5

共 17 条

[1] Deo N., High Power Transmitters for Q/V-band Communications-beyond Alphasat, IEEE Aerospace Conference Proceedings: 2019, (2019)
[2] Barabi A., Ross N., Wolfman A., Et al., A +27 dBm Psat 27 dB Gain W-band Power Amplifier in 0.1 μm GaAs, Proceedings of the 2018 IEEE MTT-S International Microwave Symposium, pp. 1345-1347, (2018)
[3] Jun L., Xin L., Weihua Y., A D-band MMIC Amplifier with 70-nm InP PHEMT, Proceedings of the 2019 IEEE MTT-S International Wireless Symposium, (2019)
[4] Squartecchia M., Midili V., Johansen T.K., Et al., 75 GHz InP DHBT Power Amplifier Based on Two-stacked Transistors, Proceedings of the 2017 Asia-Pacific Microwave Conference, pp. 314-317, (2017)
[5] Griffith Z., Urteaga M., Rowell P., A 140 GHz 0.25 W PA and a 55-135 GHz 115-135 mW PA, High-gain, Broadband Power Amplifier MMICs in 250 nm InP HBT, 2019 IEEE MTT-S International Microwave Symposium Digest, pp. 1245-1248, (2019)
[6] Al-Sawaf T., Nosaeva K., Weimann N.G., Et al., A 200 mW InP DHBT W-band Power Amplifier in Transferred-substrate Technology with Integrated Diamond Heat Spreader, 2016 IEEE MTT-S International Microwave Symposium Digest, (2016)
[7] Margomenos A., Kurdoghlian A., Micovic M., Et al., GaN Technology for E, W and G-band Applications, Proceedings of the 2014 IEEE Compound Semiconductor Integrated Circuit Symposium, (2014)
[8] Nakasha Y., Masuda S., Makiyama K., Et al., E-band 85 mW Oscillator and 1.3 W Amplifier ICs Using 0.12 μm GaN HEMTs for Millimeter-wave Transceivers, Proceedings of the 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, (2010)
[9] Schwantuschke D., Godejohann B.J., Bruckner P., Et al., Mm-wave Operation of AlN/GaN-devices and MMICs at V-& W-band, Proceedings of the 201822nd International Microwave and Radar Conference, pp. 238-241, (2018)
[10] Velazco J., Samoska L., Taylor M., Et al., Spatial Power Combiner Using Cavity Modes in W-band, 2019 IEEE MTT-S International Microwave Symposium Digest: 2019, pp. 991-994, (2019)

← 1 2 →