On-state Properties of GaAs Photoconductive Semiconductor Switch Triggered by Laser Diode

被引：0
|
作者：
Shen Y. [1 ]
Liu Y. [1 ]
Wang W. [1 ]
Ye M. [1 ]
Zhang H. [1 ]
Xia L. [1 ]
机构：
[1] Key Laboratory of Pulsed Power, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang
来源：
Gaodianya Jishu/High Voltage Engineering | 2019年 / 45卷 / 01期
基金：
中国国家自然科学基金;
关键词：
GaAs; Laser diode; On-state properties; Photoconductive semiconductor switch; Pulse power technology;
D O I：
10.13336/j.1003-6520.hve.20181229029
中图分类号：
学科分类号：
摘要：
Based on solid-state planar transmission lines, coaxial transmission lines, GaAs photoconductive semiconductor switches (PCSS) and laser diode triggers, two types of pulse forming lines were designed to study the on-state properties of GaAs PCSS triggered by laser diode. The solid-state Blumlein pulse forming lines based on GaAs PCSS could output a high-power pulse voltage with short duration and rising time. The methods of measurement about the time jitter and on-state resistance are presented, and both the time jitter and on-state resistance of GaAs PCSS decrease as the laser energy and input voltage increase. It is measured that the minimum switch's jitter is 0.12 ns, and on-state resistance is in an order of ohms magnitude. The on-state current of GaAs PCSS is about 250~300 A (Z0=25 Ω), which can be shunted by using two GaAs PCSS in parallel. The on-state time is measured to be 0.4~0.6 ns, and increases with the shot accumulating. © 2019, High Voltage Engineering Editorial Department of CEPRI. All right reserved.
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页码：310 / 315
页数：5
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