Low-power perovskite-based threshold switching memristor for artificial nociceptor

被引：2

作者：

Li, Yingchen ^{[1
]}

Li, Jiacheng ^{[2
,3
]}

Ni, Jian ^{[1
]}

Zhang, Jianjun ^{[1
]}

Cai, Hongkun ^{[1
]}

机构：

[1] Nankai Univ, Coll Elect Informat & Opt Engn, Dept Elect Sci & Technol, Tianjin 300350, Peoples R China

[2] Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing 100081, Peoples R China

[3] Yangtze Delta Reg Acad, Beijing Inst Technol, Beijing 100081, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2024年 / 1000卷

基金：

中国国家自然科学基金;

关键词：

Organic-inorganic halide perovskites; Low-power; Hreshold switching memristor;

D O I：

10.1016/j.jallcom.2024.175121

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Organic-inorganic halide perovskites (OHPs) with good ion diffusion paths are effective functional materials for simulating biological neurons. In this work, we utilize the Ag diffusion threshold switching phenomenon in FAPbI(3) films to investigate the nociceptor function. The threshold switching device exhibits a low threshold voltage (0.075 V) and a large characteristic switching ratio of 10(7) in volatile resistance switching, along with a minimum switching slope (SS< 2.6 mV/dec), and the device achieves low power consumption of 150 pW. Importantly, the nociceptor functions of threshold firing and sensitization have been successfully simulated based on the volatile threshold switching characteristics, which demonstrates the potential in practical neuromorphic applications.

引用

页数：6

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