Low-power perovskite-based threshold switching memristor for artificial nociceptor

Organic-inorganic halide perovskites (OHPs) with good ion diffusion paths are effective functional materials for simulating biological neurons. In this work, we utilize the Ag diffusion threshold switching phenomenon in FAPbI(3) films to investigate the nociceptor function. The threshold switching device exhibits a low threshold voltage (0.075 V) and a large characteristic switching ratio of 10(7) in volatile resistance switching, along with a minimum switching slope (SS< 2.6 mV/dec), and the device achieves low power consumption of 150 pW. Importantly, the nociceptor functions of threshold firing and sensitization have been successfully simulated based on the volatile threshold switching characteristics, which demonstrates the potential in practical neuromorphic applications.