Strain alleviation and light emission improvement of indium-doped β-Ga2O3 films

被引：2

作者：

Ren, Wei ^{[1
,2
]}

Li, Xue-Mei ^{[1
]}

Fan, Wei-Tao ^{[2
]}

Wang, Wei-Li ^{[2
]}

Li, Sai-Rui ^{[1
]}

Liu, Xian-Hai ^{[1
]}

Li, Nan ^{[2
]}

Liu, Guang-Hui ^{[2
]}

Weng, Xiang ^{[2
]}

机构：

[1] Xian Univ Posts & Telecommun, Sch Sci, Xian 710121, Peoples R China

[2] Northwestern Polytech Univ, Xian 710072, Peoples R China

来源：

JOURNAL OF LUMINESCENCE | 2024年 / 273卷

基金：

中国国家自然科学基金;

关键词：

Gallium oxide; Thin film; Indium addition; Photoluminescence; Heat treatment; THIN-FILMS; OPTICAL-PROPERTIES; GA2O3; FILMS;

D O I：

10.1016/j.jlumin.2024.120685

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The structural and optical properties of the indium-doped /3-Ga2O3 films were investigated. Doping the film with more indium alleviates the film strain, leading to the reduction of the size and amount of the holes in the films. The increase of annealing temperature enlarges the holes and makes the film surface flatter. For luminescence performance, addition of more indium slightly inhibits deep ultraviolet (275 nm) light emission of the films and greatly inhibits the near-infrared emission (720 nm). Annealing the /3-Ga2O3 film at higher temperature improve its ultraviolet and near-infrared emission. The mechanisms were revealed.

引用

页数：8

共 37 条

[1] Origin of the blue luminescence of β-Ga2O3 [J].

Binet, L ;

Gourier, D .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1998, 59 (08) :1241-1249

[2] Tuning electrical conductivity of β-Ga2O3 single crystals by Ta doping [J].

Cui, Huiyuan ;

Mohamed, H. F. ;

Xia, Changtai ;

Sai, Qinglin ;

Zhou, Wei ;

Qi, Hongji ;

Zhao, Jingtai ;

Si, Jiliang ;

Ji, Xiaoli .

JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 788 :925-928

[3] Mg-doped β-Ga2O3 films with tunable optical band gap prepared on MgO (110) substrates by metal-organic chemical vapor deposition [J].

Feng, Xianjin ;

Li, Zhao ;

Mi, Wei ;

Luo, Yi ;

Ma, Jin .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 34 :52-57

[4] Recent progress in Ga2O3 power devices [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Murakami, Hisashi ;

Kumagai, Yoshinao ;

Koukitu, Akinori ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (03)

[5] The effect of micromechanical stresses on vacancy formation and stress-driven mass-transport in polycrystalline Fe-Au alloy [J].

Hussein, Abdelrahman ;

Zwaag, Sybrand van der ;

Kim, Byungki .

MATERIALS CHEMISTRY AND PHYSICS, 2024, 315

[6] Three-dimensional anisotropic thermal conductivity tensor of single crystalline β-Ga2O3 [J].

Jiang, Puqing ;

Qian, Xin ;

Li, Xiaobo ;

Yang, Ronggui .

APPLIED PHYSICS LETTERS, 2018, 113 (23)

[7] Electrical, optical and structural characteristics of gallium oxide thin films deposited by RF-sputtering [J].

Juarez-Amador, L. I. ;

Galvan-Arellano, M. ;

Andraca-Adame, J. A. ;

Romero-Paredes, G. ;

Kennedy-Magos, A. ;

Pena-Sierra, R. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (18) :15726-15731

[8] Ga2O3 films grown on sapphire by the thermal evaporation of GaN powders [J].

Kim, Hyoun Woo ;

Myung, Ju Hyun .

HIGH-PERFORMANCE CERAMICS IV, PTS 1-3, 2007, 336-338 :637-+

[9] Study of photoconduction properties of CVD grown β-Ga2O3 nanowires [J].

Kumar, Sudheer ;

Dhara, Sajal ;

Agarwal, Ritesh ;

Singh, R. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 683 :143-148

[10] A comparative study of β-Ga2O3 nanowires grown on different substrates using CVD technique [J].

Kumar, Sudheer ;

Tessarek, C. ;

Christiansen, S. ;

Singh, R. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 587 :812-818

← 1 2 3 4 →