Study on Surface Corrosion and Wear Performance of Single-crystal SiC Based on Metal Electrochemical Corrosion

被引：0

作者：

Hu D. ^{[1
,2
]}

Lu J. ^{[1
,2
]}

Yan Q. ^{[1
,2
]}

Luo Y. ^{[1
,2
]}

Luo Z. ^{[1
,2
]}

机构：

[1] School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou

[2] State Key Laboratory for High-Performance Tools, Guangzhou

来源：

Hunan Daxue Xuebao/Journal of Hunan University Natural Sciences | 2024年 / 51卷 / 04期

基金：

中国国家自然科学基金;

关键词：

chemical mechanical polishing; corrosion performance; metal electrochemical corrosion; single-crystal SiC; wear performance;

D O I：

10.16339/j.cnki.hdxbzkb.2024178

中图分类号：

学科分类号：

摘要：

Aiming at the environmental pollution of the polishing solution in chemical mechanical polishing,a single-crystal SiC chemical mechanical polishing method based on metal electrochemical corrosion is proposed. The Si surface of single-crystal SiC corrosion performance and wear performance of electrochemically corroded were investigated by corrosion experiments and wear experiments. By comparing the corrosion performance of Al,Cu,and Fe metals on the Si face in a Na2SO4 electrolyte solution,it was found that only Al can generate a noticeable corrosion layer. The EDS and XPS analyses of the Si face confirmed that the corrosion is due to the formation of the SiO2 layer. Frictional wear experiments were conducted to investigate the influence of solution composition on the wear behavior of Si face. Increasing the concentration of the Na2SO4 electrolyte solution resulted in higher wear,with a maximum wear value of 7.19 μm2 obtained in 1.00 mol/L Na2SO4 electrolyte solution. In an acidic corrosive solution,the Si face exhibited the highest material removal,with a wear value of 11.97 μm2 achieved at pH=3. The material removal mechanism of single-crystal SiC via metal electrochemical corrosion involved the corrosive reaction involving Al at the cathode,which generated a corrosion current,and the subsequent oxidation of the SiC surface at the anode,thereby forming a SiO2 oxide layer leading to material removal. © 2024 Hunan University. All rights reserved.

引用

页码：123 / 131

页数：8

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