Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template

被引：0

作者：

Jiao T. ^{[1
]}

Li Z.-M. ^{[1
]}

Wang Q. ^{[2
]}

Dong X. ^{[1
]}

Zhang Y.-T. ^{[1
]}

Bai S. ^{[2
]}

Zhang B.-L. ^{[1
]}

Du G.-T. ^{[1
]}

机构：

[1] State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun

[2] State Key Laboratory of Wide-bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, Nanjing

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2020年 / 41卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Gallium oxide; High temperature oxidation; Metal-organic chemical vapor deposition;

D O I：

10.3788/fgxb20204103.0281

中图分类号：

学科分类号：

摘要：

To obtain high-quality β-Ga2O3 thin film, GaN thin film grown on c-plane sapphire is made into Ga2O3/GaN/sapphire template by thermal oxidation, and the β-Ga2O3 thin film is grown on the template by metal-organic chemical vapor deposition(MOCVD). The crystal structure and surface morphology of the samples are measured and analyzed by X-ray diffraction, atomic force microscope and field emission scanning electron microscope. The results show that the crystal quality of the β-Ga2O3 films is affected by GaN film oxidation effect and MOCVD process conditions greatly. By optimizing the experimental conditions, the high-quality β-Ga2O3 thin films are obtained. By comparing with the films grown on sapphire or GaN films, the crystal quality of the β-Ga2O3 films is found improved obviously. We find that this method successfully transforms the heteroepitaxy of the β-Ga2O3 film on sapphire substrate or GaN/sapphire template into the homoepitaxy of that on Ga2O3/GaN/sapphire template, effectively reduces the large lattice mismatch and thermal mismatch between β-Ga2O3 film, sapphire and GaN, and is beneficial to improve the crystal quality of β-Ga2O3 film. © 2020, Science Press. All right reserved.

引用

页码：281 / 287

页数：6

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