Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions

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作者
Matsumae, Takashi [1 ]
Kurashima, Yuichi [1 ]
Takagi, Hideki [1 ]
Umezawa, Hitoshi [2 ]
Higurashi, Eiji [1 ]
机构
[1] National Institute of Advanced Industrial Science and Technology (AIST), Device Technology Research Institute, 1-2-1 Namiki, Tsukuba, Ibaraki,305-8564, Japan
[2] National Institute of Advanced Industrial Science and Technology (AIST), Advanced Power Electronics Research Center (ADPERC), 1-8-31 Midoriokai, Ikeda, Osaka,563-8577, Japan
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页码:52 / 55
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