Effects of substrate-controlled-orientation on the electrical performance of sputtered BaTiO3 thin films

被引:0
|
作者
Zhang, Wei [1 ]
Hu, Fangren [1 ,2 ]
机构
[1] College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing,210023, China
[2] Peter Grunberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing,210003, China
基金
中国国家自然科学基金;
关键词
Textures - Electrodes - Magnesia - Cobalt compounds - Lanthanum compounds - Carrier concentration - Ruthenium compounds - Strontium titanates - Barium titanate - Thin films - Magnetron sputtering;
D O I
暂无
中图分类号
学科分类号
摘要
In this work, the relationships between bottom electrode/substrate configuration, crystalline microstructure, and electrical performances of BaTiO3 (BTO) thin films were investigated. The films were fabricated via RF magnetron sputtering on (Sr0.5La0.5)CoO3 (LSCO) buffered (110)-, (111)-SrTiO3 (STO) and SrRuO3 (SRO) buffered (110)-, (111)-MgO (MGO) substrates. The x-ray diffractometer results show that the LSCO/STO substrate resulted in films with high-quality epitaxial orientation, whereas the SRO/MGO substrate resulted in films having a strong (110) texture. The electrode/substrate configurations were designed to control the crystalline microstructure, which in turn affects the electrical performances of the films. The electrical performances were studied by employing a metal/ferroelectric/metal model. The J-V characteristics show obvious asymmetry with bias, which is mainly due to the varying transport state of oxygen vacancies. BTO films grown on LSCO/STO substrates exhibit large dielectric frequency dispersion, while those grown on SRO/MGO substrates display a nearly frequency independent response. All electrical parameters of these films were strongly affected by the polarization-tilting angle and the preferred orientation degree. Epitaxial and textured (110)-oriented films show higher permittivity but lower loss tangent, free-carrier concentration, built-in voltage, and leakage current density as compared to the epitaxial (111)-oriented film. © 2020 Author(s).
引用
收藏
相关论文
共 50 条
  • [41] Selective growth and optical properties of sputtered BaTiO3 films
    Dazzi, A
    Gueldry, A
    Maglione, M
    Sibillot, P
    Mathey, P
    Jullien, P
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2000, 9 (03): : 181 - 185
  • [42] The energy gap of rf-sputtered BaTiO3 thin films with different grain size
    Lu, XM
    Zhu, JS
    Zhang, WY
    Ma, GQ
    Wang, YN
    THIN SOLID FILMS, 1996, 274 (1-2) : 165 - 168
  • [43] THE EFFECT OF TEMPERATURE ON PROPERTIES OF RF SPUTTERED BATIO3 FILMS
    OLSON, JC
    STEVISON, DF
    BRANSKY, I
    FERROELECTRICS, 1981, 37 (1-4) : 685 - 687
  • [45] Ninety degree domains in RF-sputtered BaTiO3 thin films on platinum substrates
    Jang, JW
    Cho, WJ
    Lee, JH
    Kim, IT
    Kim, YH
    Kim, CH
    Park, JH
    Choi, SS
    Hahn, TS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6937 - 6941
  • [46] Ninety degree domains in RF-sputtered BaTiO3 thin films on platinum substrates
    Jang, Jin Wook
    Cho, Woon Jo
    Lee, Jong Ho
    Kim, In Tae
    Kim, Young Hwan
    Kim, Chang Hoon
    Park, Jong Hyeog
    Choi, Sang Sam
    Hahn, Taek Sang
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (11): : 6937 - 6941
  • [47] Oxygen vacancy induced magnetism in BaTiO3−δ and Nb:BaTiO3−δ thin films
    Fang Yang
    KuiJuan Jin
    HuiBin Lu
    Meng He
    Cong Wang
    Juan Wen
    GuoZhen Yang
    Science China Physics, Mechanics and Astronomy, 2010, 53 : 852 - 855
  • [48] Stability of BaTiO3 thin films on Si
    Chang, LH
    Anderson, WA
    APPLIED SURFACE SCIENCE, 1996, 92 : 52 - 56
  • [49] Hydrothermal preparation of BaTiO3 thin films
    Kyung Won Seo
    Hyun Goo Kong
    Korean Journal of Chemical Engineering, 2000, 17 : 428 - 432
  • [50] Epitaxial BaTiO3 thin films on MgO
    Buchal, C
    Beckers, L
    Eckau, A
    Schubert, J
    Zander, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 56 (2-3): : 234 - 238