An 0.4-2.8 GHz CMOS Power Amplifier with On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power

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作者：
Mariappan, Selvakumar [1 ]
Rajendran, Jagadheswaran [1 ,2 ]
Yusof, Yusman M. [2 ]
Noh, Norlaili M. [3 ]
Yarman, Binboga Siddik [4 ]
机构：
[1] Collaborative Microelectronics Design Excellence Center (CEDEC), Universiti Sains Malaysia, Penang,11900, Malaysia
[2] SilTerra Malaysia Sdn. Bhd., Kulim,09090, Malaysia
[3] School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Penang,11900, Malaysia
[4] Department of Electrical and Electronics Engineering, Istanbul University, Istanbul,34320, Turkey
来源：
IEEE Access | 2021年 / 9卷
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页码：48831 / 48840
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  • [1] An 0.4-2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power
    Mariappan, Selvakumar
    Rajendran, Jagadheswaran
    Yusof, Yusman M.
    Noh, Norlaili M.
    Yarman, Binboga Siddik
    IEEE ACCESS, 2021, 9 : 48831 - 48840
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    Yarman, Binboga Siddik
    IEEE ACCESS, 2019, 7 : 158808 - 158819
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