High-performance IGZO/In2O3 NW/IGZO phototransistor with heterojunctions architecture for image processing and neuromorphic computing

被引:16
作者
Fu, Can [1 ]
Li, Zhi-Yuan [2 ]
Li, Yu-Jiao [1 ]
Zhu, Min-Min [1 ]
Luo, Lin-Bao [2 ]
Jiang, Shan-Shan [3 ]
Wang, Yan [2 ]
Wang, Wen-Hao [1 ]
He, Gang [1 ]
机构
[1] Anhui Univ, Sch Mat Sci & Engn, Hefei 230601, Peoples R China
[2] Hefei Univ Technol, Sch Microelect, Hefei 230009, Peoples R China
[3] Anhui Univ, Sch Integrat Circuits, Hefei 230601, Peoples R China
来源
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2024年 / 196卷
基金
中国国家自然科学基金;
关键词
Metal oxide; Artificial synaptic devices; Phototransistor; Associative-memory-learning; Neuromorphic applications; TRANSISTORS; PLASTICITY; SYNAPSE;
D O I
10.1016/j.jmst.2024.02.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The development of high-performance neuromorphic phototransistors is of paramount importance for image perception and depth memory learning. Here, based on metal-oxide heterojunction architecture, artificial synaptic phototransistors with synaptic plasticity have been achieved, demonstrating an artificial synapse that integrates central and optic nerve functions. Thanks to the sensitive light-detection properties, the optical power consumption of such photonic artificial synapses can be as low as 22 picojoules, which is extremely competitive compared with other pure metal oxide photoelectric synapses ever reported. What is more, owing to its good short-term (STP) and tunable amplitude-frequency characteristics, the as-constructed device can function as a biomimetic high-pass filter for picture edge detection. Dual-mode synaptic modulation has been performed, combining photonic pulse with gate voltage stimulus. After photoelectric-synergistic modulation, the high synaptic weights enable the device to simulate complex neural learning rules for neuromorphic applications, including gesture recognition, image perception in the visual system, and classically conditioned reflexes. These results suggest that the current oxide-based heterojunction architecture displays potential application in future multifunction neuromorphic devices and systems. (c) 2024 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
引用
收藏
页码:190 / 199
页数:10
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