First Principle Calculation of Electronic Structure and Optical Properties of ZnNb2-xTaxO6 (x=0-2.0)

被引:0
作者
Yan Y.-X. [1 ]
Wang F. [1 ]
Li F.-S. [1 ]
Zhang J.-X. [2 ]
Wang H.-C. [1 ]
Huang Y.-F. [1 ]
Shen J.-Q. [1 ]
Luo Z.-J. [1 ]
Gao H.-R. [1 ]
机构
[1] College of Chemistry and Environmental Science, Qujing Normal University, Qujing
[2] College of Teacher Education, Qujing Normal University, Qujing
来源
Yan, Yu-Xing (58536437@qq.com) | 1600年 / Editorial Office of Chinese Optics卷 / 41期
关键词
Electrobic structure; First-principles; Optical properties; ZnNb[!sub]2[!/sub]O[!sub]6[!/sub;
D O I
10.3788/fgxb20204101.0038
中图分类号
学科分类号
摘要
According to the pseudopotential plane-wave method of first-principles calculation based on the DFT, we investigate the electronic structures and optical properties of ZnNb2O6 doped by tantalum with different concentrations, and their relationship is theoretically analyzed. The dielectric function and complex refractive, reflectivity, and absorption coefficents of ZnNb2-xTaxO6 (x=0-2.0) dominated by electron interband transitions are analyzed in terms of the precisely calculated band structure and density of satates. The results indicate that: (1)ZnNb2-xTaxO6 (x=0-2.0) is a indirect semiconductor and the band gap is 3.51-2.916 eV. the conduction band edge moves in the direction of the Fermi level after being doped. The density of states is mainly composed of O 2p, Zn 3d, Nb 4d and Ta 5d orbitis. (2)The valences electronic state of ZnNb2-xTaxO6 (x=0-2.0) is asymmetric and has a strong local area characteristic. These have an important influence on the electronic structure and the bonding chararcteristics of ZnNb2-xTaxO6 (x=0-2.0). (3)The calculation of the dielectric function reveals that ZnNb2-xTaxO6 (x=0-2.0) is anisotropic, the biggest peak of absorption will fluctuate narrowly around 3.02×105 cm-1, the extinction coefficient shows strong absorption characteristic near the band edge, and the mechanism of the electric and optical properties of ZnNb2-xTaxO6 (x=0-2.0) dominated by electron inter-band transitions are analyzed in terms of calculated band structure and desity of states, which provides theoretical basis for developing novel functional materials with high performance to be used in optoelectronic devices. © 2020, Science Press. All right reserved.
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页码:38 / 47
页数:9
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