Comparative Analysis of Large-capacity Fully-controlled Press-pack IGBT and IGCT: Principle, Structure, Characteristics and Application

被引：0

作者：

Zhou W. ^{[1
]}

Zeng R. ^{[1
]}

Zhao B. ^{[1
]}

Chen Z. ^{[1
]}

Liu J. ^{[1
]}

Bai R. ^{[1
]}

Wu J. ^{[1
]}

Yu Z. ^{[1
]}

机构：

[1] Department of Electrical Engineering, Tsinghua University, Haidian District, Beijing

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2022年 / 42卷 / 08期

基金：

中国国家自然科学基金;

关键词：

DC power grids; Injection enhanced gate transistor (IEGT); Insulated gate bipolar transistor (IGBT); Integrated gate commutated thyristor (IGCT); Large-capacity power electronics; Press-pack device;

D O I：

10.13334/j.0258-8013.pcsee.212576

中图分类号：

学科分类号：

摘要：

Fully-controlled press-pack devices are the core components of large-capacity power electronic equipment for power conversion, mainly including thyristor-like devices such as integrated gate commutated thyristor (IGCT), and transistor-like devices such as insulated gate bipolar transistor (IGBT) and injection enhanced gate transistor (IEGT). This paper firstly introduced and compared chip structures and manufacturing processes of IGCT and IGBT (including IEGT). Then, the working principles and packaging structures of IGCT and IGBT (including IEGT) were analyzed and compared. After that, the working characteristics of different fully-controlled press-pack devices were analyzed systematically from nine aspects including working frequency, turn-off capability, dynamic tolerance, device capacity, operating loss, gate driver power, housing package explosion proof, short circuit failure mode (SCFM), and device reliability. Finally, the application status and application forecast of fully-controlled press-pack devices were summarized and prospected. © 2022 Chin. Soc. for Elec. Eng.

引用

页码：2940 / 2956

页数：16

共 80 条

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