Growth of Six Inches SiC Single Crystals Without Micropipe Defect

被引：0

作者：

Zhang F. ^{[1
]}

Yang K. ^{[1
]}

Liu X. ^{[1
]}

Lu Y. ^{[1
]}

Niu X. ^{[1
]}

Shang Y. ^{[1
]}

Li T. ^{[1
]}

机构：

[1] Hebei Synlight Crystal Co., Ltd, Baoding

来源：

Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | 2021年 / 49卷 / 04期

关键词：

4H-silicon carbide single crystals; Micropipe closing; Micropipe defect;

D O I：

10.14062/j.issn.0454-5648.20200508

中图分类号：

学科分类号：

摘要：

The micropipe (MP) in silicon carbide (SiC) single crystal substrate is a fatal defect for SiC-based devices, which will seriously affect the yield of SiC power devices. In this paper, the 6 in n-type 4H-SiC single crystals without micropipe defect were prepared by the optimized growth design based on physical vapor transport (PVT) method. The effects of the optimized growth design on the elimination of micropipes were also studied. Based on the principle of crystallography and kinetics, the mechanism of micropipe decomposition and closing is clarified. In summary, the optimized growth design adopted in this paper not only promotes the stability of SiC single crystal growth, but also can improve the crystalline quality of SiC single crystal, and can quickly reduce the density of micropipes. The prepared large size 6 in n-type 4H-SiC single crystals without micropipe defect will be more suitable for making high-voltage and ultra-high-voltage power devices. © 2021, Editorial Department of Journal of the Chinese Ceramic Society. All right reserved.

引用

页码：736 / 742

页数：6

共 23 条

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