Heavy Ion Experiment Research of Single Event Effect in 22 nm FDSOI Technology SRAM

被引：0

作者：

Zhao W. ^{[1
,2
]}

Zhao K. ^{[3
]}

Chen W. ^{[2
]}

Shen M. ^{[3
]}

Wang T. ^{[2
]}

Guo X. ^{[1
,2
]}

He C. ^{[1
]}

机构：

[1] School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an

[2] State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an

[3] Shanghai Fudan Microelectronics Group Co., Ltd., Shanghai

来源：

Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | 2022年 / 56卷 / 03期

关键词：

Fully depleted silicon on insulator; Heavy ion; Single event effect; Static random array memory;

D O I：

10.7538/yzk.2021.youxian.0096

中图分类号：

学科分类号：

摘要：

The heavy ion experiment was carried out for the static random array memory (SRAM) fabricated with the 22 nm fully depleted silicon on insulator (FDSOI) technology. The single event upset (SEU) and multiple cell upset (MCU) sensitivities of FDSOI SRAM with different radiation-hardened designs were compared. The characterization and mechanism of MCU induced by read-write errors were analyzed. The influence of the substrate bias voltage on FDSOI SRAM SEU sensitivity was revealed. The results show that for five investigated FDSOI SRAMs, the anti-SEU capability is from weak to strong in order of 8-T SRAM2, redundancy-designed SRAM1, dual interlocked cell (DICE) SRAM3 or SRAM4, and dual-DICE SRAM5. The memory arrays of the three DICE-type FDSOI SRAMs have better anti-MCU performance than those of the other two SRAMs. Although the memory arrays of DICE-type FDSOI SRAMs had strong anti-MCU capability, the influence of read-write errors inducing MCU on DICE-type FDSOI SRAMs could not be ignored, and the influence is found to be more serious with the increase of SRAM operation frequency. The substrate bias voltage affects the FDSOI SRAMs upset sensitivity by controlling the parasitic bipolar amplification effect. © 2022, Editorial Board of Atomic Energy Science and Technology. All right reserved.

引用

页码：537 / 545

页数：8

共 21 条

[1]

CRISTOLOVEANU S, FERLET-CAVROIS V., Introduction to SOI MOSFETs: Context, radiation effects, and future trends, International Journal of High Speed Electronics and Systems, 14, 2, pp. 465-487, (2004)

[2]

The International technology roadmap for semiconductors-2011 Ed

[3]

SCHWANK J, FERLET-CAVROIS V, SHANEYFELT M, Et al., Radiation effects in SOI technologies, IEEE Transactions on Nuclear Science, 50, 3, pp. 522-538, (2003)

[4]

GASIOT G, SOUSSAN D, GLORIEUX M, Et al., SER/SEL performances of SRAMs in UTBB FDSOI 28 nm and comparisons with PDSOI and BULK counterparts, IEEE International Reliability Physics Symposium, (2014)

[5]

CAI Chang, ZHAO Peixiong, XU Liwei, Et al., SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell, Microelectronics Reliability, 100-101, (2019)

[6]

(2019)

[7]

MALHERBE V, GASIOT G, SOUSSAN D, Et al., Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis, IEEE International Reliability Physics Symposium, (2015)

[8]

LUO Yinhong, ZHANG Fengqi, CHEN Wei, Et al., The orientational dependence of single event upsets and multiple-cell upsets in 65 nm dual DICE SRAM, Microelectronics Reliability, 94, pp. 24-31, (2019)

[9]

DODD P E, SHANEYFELT M R, FELIX J A, Et al., Production and propagation of single-event transients in high-speed digital logic ICs, IEEE Transactions on Nuclear Science, 51, 6, pp. 3278-3284, (2004)

[10]

FERLET-CAVROIS V, PAILLET P, GAILLARDIN M, Et al., Statistical analysis of the charge collected in SOI and bulk devices under heavy ion and proton irradiation-implications for digital SETs, IEEE Transactions on Nuclear Science, 53, 6, pp. 3242-3252, (2006)

← 1 2 3 →