Response of pulse laser irradition solar cell and effect of photoelectric conversion

被引：0

作者：

Chen Y. ^{[1
]}

Chang H. ^{[1
]}

Zhou W. ^{[1
]}

Yu C. ^{[1
]}

机构：

[1] State Key Laboratory of Laser Propulsion & Application, Department of Aerospace Science and Technology, Space Engineering University, Beijing

来源：

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2020年 / 49卷

关键词：

Laser irradiation; Photoelectric conversion; Temperature; Voltage-current characteristics;

D O I：

10.3788/IRLA20200262

中图分类号：

学科分类号：

摘要：

Based on the established laser thermal conduction model and photoelectric conversion physical model of single-junction GaAs solar cells, the effects of pulse laser irradiation temperature and photoelectric conversion on single-junction GaAs solar cells were simulated and studied. Two different types, 532 nm and 808 nm, were studied. Under different irradiation energy and incident angle, the solar cell temperature, voltage-current characteristics, photoelectric conversion efficiency and other properties were changed by the pulsed laser with different wavelengths. The simulation results show that the smaller the angle between the incident laser and the normal direction of the solar cell, the greater the electric power of the solar cell output under the same laser irradiation intensity, 532 nm and 808 nm wavelength lasers have little difference in temperature caused by GaAs battery irradiation. 808 nm wavelength laser has a larger absorption coefficient for GaAs materials than 532 nm wavelength laser. Solar cells can absorb more energy and have a higher response. Single-junction GaAs cells irradiated with 808 nm wavelength laser can output more electrical power and bring greater photoelectric conversion efficiency. © 2020, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.

引用

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