Synergistic effect of DNA interfacing on carbon nanotube field effect transistor devices

被引：0

作者：

Rastogi R. ^{[1
]}

Pant B.D. ^{[2
]}

Bharadwaj L.M. ^{[3
,4
]}

机构：

[1] Centre for Nanoscience and Nanotechnology, South Campus, Panjab University, Sector-25, Chandigarh

[2] Smart Sensors Area, Central Electronics Engineering Research Institute, Pilani, Rajasthan

[3] Biomolecular Electronics and Nanotechnology Division, Central Scientific Instruments Organization (CSIO), Sector 30-C, Chandigarh

[4] Amity University of Nanotechnology, Noida, Uttar Pradesh

来源：

International Journal of Nano and Biomaterials | 2020年 / 9卷 / 3-4期

关键词：

Carbon nanotubes; CNTs; DNA; FET; Field effect transistor; Schottky barrier; Transconductance;

D O I：

10.1504/IJNBM.2020.112225

中图分类号：

学科分类号：

摘要：

Successful integration of carbon nanotubes (CNTs) in electronic devices and sensors requires controlled deposition at well defined locations and appropriate electrical contacts to metal electrodes/leads. Controlled self-assembly of CNTs can be achieved by interfacing them with biological molecule like DNA using its self-recognition property. However, these biointerfaces can produce undesirable changes in their device characteristics. Herein, we report an extensive study of effect of DNA interfacing on device characteristics of carbon nanotube field effect transistors and explored its synergistic effects as self-assembling element in future nanodevices. Single walled carbon nanotubes (SWNTs) are interfaced with DNA (via both covalent and non-covalent methodology) and electronic transport properties of corresponding field effect transistor devices have been studied in order to have an insight into changes in the electrical properties of SWNTs after interfacing. It was concluded that covalently linked DNA is not appropriate for self-assembly of carbon nanotubes in future nanodevices as it ruins its electrical characteristics. © 2020 Inderscience Enterprises Ltd.

引用

页码：142 / 170

页数：28

共 40 条

[1]

Avouris P., Chen Z., Perebeinos V., Carbon-based electronics, Nature Nanotechnology, 2, 2, (2007)

[2]

Bachtold A., Hadley P., Nakanishi T., Dekker C., Logic circuits with carbon nanotube transistors, Science, 294, 5545, (2001)

[3]

Bolotin K.I., Sikes K.J., Jiang Z., Klimac M., Fudenberga G., Honec J., Kima P., Stormer H.L., Ultrahigh mobility in suspended graphene, Solid State Communications, 146, 9-10, (2008)

[4]

Cha M., Jung S., Cha M.H., Kim G., Lee J., Reversible metal-semiconductor transition of ssDNA-decorated single walled nanotubes, Nanoletters, 9, 4, (2009)

[5]

Chandra B., Bhattacharjee J., Purewal M., Son Y.W., Wu Y., Huang M., Yan H., Heinz T.F., Kim P., Neaton J.B., Hone J., Molecular-scale quantum dots from carbon nanotube heterojunctions, Nanoletters, 9, 4, (2009)

[6]

Chen Y., Liu H., Ye T., Kim J., Mao C., DNA-directed assembly of single-wall carbon nanotubes, J. Am. Chem. Soc, 129, 28, (2007)

[7]

Collins P.G., Arnold M.S., Avouris P., Engineering carbon nanotubes and nanotube circuits using electrical breakdown, Science, 292, 5517, (2001)

[8]

Cui J.B., Burghard M., Kern K., Room temperature single electron transistor by local chemical modification of carbon nanotubes, Nanoletters, 2, 2, (2002)

[9]

Cui J.B., Sordan R., Burghard M., Kern K., Carbon nanotube memory devices of high charge storage stability, Appl. Phys. Lett, 81, 17, (2002)

[10]

Dwyer C., Guthold M., Falvo M., Washburn S., Superfine R., Erie D., DNA-functionalized single-walled carbon nanotubes, Nanotechnology, 13, 5, (2004)

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