Projecting GaN HEMTs lifetimes under typical stresses commonly observed in DC-DC converters

被引：0

作者：

Zhang S. ^{[1
]}

Gajare S. ^{[1
]}

Garcia R. ^{[1
]}

Huang S. ^{[1
]}

Espinoza A. ^{[1
]}

Gorgerino A. ^{[1
]}

Zhang R. ^{[1
]}

Pozo A. ^{[1
]}

Strittmatter R. ^{[1
]}

Lidow A. ^{[1
]}

机构：

[1] Efficient Power Conversion Corporation, El Segundo, 90245, CA

来源：

Power Electronic Devices and Components | 2023年 / 6卷

关键词：

DC-DC converters; Drain reliability; GaN; Gate reliability; HEMTs; Lifetime projection; Overvoltage robustness; Temperature cycling;

D O I：

10.1016/j.pedc.2023.100051

中图分类号：

学科分类号：

摘要：

DC-DC converters exist in virtually every application of modern power electronics. Due to small die size, low on-resistance, and low parasitic capacitance, GaN power devices offer superior conversion efficiency and record-setting power density. In this paper, test-to-fail methodology is adopted to investigate the intrinsic wear-out mechanisms such as would be experienced in common DC-DC converters. Devices are stressed under gate bias, drain bias, and temperature cycling individually. The lifetime of each stressor is therefore projected based on the physics-based model developed from test-to-fail and an understanding of the unique stress conditions in DC-DC converters. © 2023 Efficient Power Conversion Corporation

引用

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