Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

被引：0
作者：
Kalam K. [1 ]
Ritslaid P. [1 ]
Käämbre T. [1 ]
Tamm A. [1 ]
Kukli K. [1 ]
机构：
[1] Institute of Physics, University of Tartu, W. Ostwaldi 1, Tartu
来源：
Beilstein Journal of Nanotechnology | 2023年 / 14卷
关键词：
atomic layer deposition; tin oxide; tin tetraiodide;
D O I：
10.3762/BJNANO.14.89
中图分类号：
学科分类号：
摘要：
Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3. Suitable evaporation temperatures for the SnI4 precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225–600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO2 films was established. © (2023), (Beilstein-Institut Zur Forderung der Chemischen Wissenschaften). All Rights Reserved.
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页码：1085 / 1092
页数：7
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