Radiation damage of InGaAs avalanche photodiode under gamma ray irradiation

被引：0

作者：

Li, Rui ^{[1
,2
]}

Li, Yudong ^{[1
]}

Maliya, Heini ^{[1
]}

Wang, Xin ^{[1
]}

Huang, Kai ^{[1
,2
]}

Zhang, Ruiqin ^{[1
,3
]}

Jiang, Yi ^{[1
,3
]}

Guo, Qi ^{[1
]}

机构：

[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, State Key Lab Funct Mat & Devices Special Environm, Xinjiang Key Lab Extreme Environm Elect, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China

[2] Xinjiang Univ, Sch Mat Sci & Engn, 666 Shengli Rd, Urumqi 830046, Peoples R China

[3] Univ Chinese Acad Sci, 19-A Yuquan Rd, Beijing 100049, Peoples R China

来源：

INFRARED PHYSICS & TECHNOLOGY | 2024年 / 140卷

基金：

中国国家自然科学基金;

关键词：

gamma-ray irradiation; InGaAs avalanche photodiode; Dark current; Interface state; MECHANISMS;

D O I：

10.1016/j.infrared.2024.105393

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The gamma-ray irradiation characteristics of InGaAs avalanche photodiode (APD) in a space radiation environment have been comprehensively investigated through an in-depth study. The results show that gamma-ray can cause the dark current and low frequency noise of InGaAs APD to increase, while the avalanche breakdown characteristics, multiplication gain, spectral response and capacitance of the device are less affected by irradiation, and almost no obvious changes occur, which suggests that these parameters are insensitive to ionizing radiation. In addition, the activation energy of the device under different bias voltages is significantly increased by the ionization damage after irradiation. Finally, the annealing experiments at different temperatures after irradiation were carried out. It is found that the interface state induced by radiation is the main factor leading to the increase of dark current, low frequency noise and activation energy of InGaAs APD. Reducing the interface state can improve the device's ability to inhibit ionizing radiation damage.

引用

页数：9

共 27 条

[1] Dark current degradation of near infrared avalanche photodiodes from proton irradiation [J].