Density functional theory study of the SiF molecule adsorption and decomposition on p(2×2) reconstructed Si(001) surface

被引：3

作者：

Bouamama L. ^{[1
]}

Lounis A. ^{[1
]}

Mokrani A. ^{[2
]}

Ziane A. ^{[1
]}

Bouarab S. ^{[1
]}

Rhallabi A. ^{[2
]}

机构：

[1] Laboratoire de Physique et Chimie Quantique, Université Mouloud Mammeri Tizi-Ouzou, B.P.No.17 RP, Tizi-Ouzou

[2] Institut des Matériaux Jean Rouxel, Université de Nantes, 2 rue de la Houssinire, Nantes

来源：

Bouamama, L. (lemya.bouamama@yahoo.fr) | 1600年 / Elsevier B.V., Netherlands卷 / 697期

关键词：

Adsorption; DFT; Diffusion; Etching; Fluorine; NEB; Silicon;

D O I：

10.1016/j.susc.2020.121602

中图分类号：

学科分类号：

摘要：

The adsorption of the F and Si atoms as well as the SiF molecule on the Si(001)-p(2×2) surface is studied using first-principle calculations. Our results show that the fluorine atom saturates the dangling bond of the surface while the silicon adatom forms two bonds with the surface atoms. For the adsorption of the SiF molecule, we obtained one dissociative state which is the most stable one and seven non-dissociative states. The minimum energy paths for F diffusion and SiF decomposition on the silicon surface are explored using the nudged elastic band (NEB) method. Our study reveals that it is energetically favorable for the fluorine atom to diffuse from the SiF molecule to a surface site than the diffusion from surface site to another one. © 2020 Elsevier B.V.

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