IGBT junction temperature monitoring method based on Miller platform at specific opening time of converter working condition

被引：0
|
作者：
Yang N. [1 ,2 ]
Liu W. [1 ,2 ]
Zhang L. [3 ]
Liao Y. [3 ]
Ge X. [3 ]
机构：
[1] Locomotive & Car Research Institute, China Academy of Railway Sciences Corporation Limited, Beijing
[2] Beijing Zongheng Electro-Mechanical Technology Co., Ltd., Beijing
[3] School of Electrical Engineering, Southwest Jiaotong University, Chengdu
来源：
Dianji yu Kongzhi Xuebao/Electric Machines and Control | 2023年 / 27卷 / 08期
关键词：
converter; gate emitter voltage; insulated gate bipolar transistor; junction temperature estimation; miller platform; temperature sensitive parameter;
D O I：
10.15938/j.emc.2023.08.005
中图分类号：
学科分类号：
摘要：
Insulated gate bipolar transistor (IGBT) is the core component of power converter. Monitoring its junction temperature is of great significance to ensure the safe and reliable operation of the converter. According to the temperature sensitive characteristics of electrical parameters, this paper presents an IGBT junction temperature monitoring method based on miller platform at a specific opening time of converter, which can effectively avoid the influence of converter operating conditions on junction temperature monitoring. Firstly, the charging process of grid emitter voltage was analyzed, and the internal relationship between miller platform and junction temperature at specific conduction time was described theoretically. Secondly, the experimental platform of low-power rectifier was built to fit the miller platform at different temperatures, so as to establish the mapping relationship between miller platform and temperature. At the same time, the proposed method was verified after changing the working conditions. Finally, the influencing factors of the proposed temperature sensitive parameters are analyzed. The theory and experiment show that the characteristic parameters have good linearity and are not affected by the working conditions, which can be used in the actual operation of the converter. © 2023 Editorial Department of Electric Machines and Control. All rights reserved.
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页码：46 / 53
页数：7
相关论文
共 21 条
  • [1] LIU J, ZHANG G, CHEN Q, Et al., In situ condition monitoring of IGBTs based on the miller plateau duration, IEEE Transactions on Power Electronics, 34, 1, (2018)
  • [2] LI Hui, LIU Shengquan, LI Yang, Et al., Junction temperature evaluation model for IGBT module of wind-power converter considering multi-thermal coupling, Electric Power Automation Equipment, 36, 2, (2016)
  • [3] CHOI U M, BLAABJERG F, JQRGENSEN S, Et al., Reliability improvement of power converters by means of condition monitoring of IGBT modules, IEEE Transactions on Power Electronics, 32, 10, (2016)
  • [4] WANG H, LISERRE M, BLAABJERG F., Toward reliable power electronics: challenges, design tools and opportunities, IEEE Industrial Electronics Magazine, 7, 2, (2013)
  • [5] ZHOU Luowei, WU Junke, DU Xiong, Et al., Status and outlook of power converter’ s reliability research, Journal of Power Supply, 45, 1, (2013)
  • [6] YANG Zhengui, ZHOU Luowei, DU Xiong, Et al., Effects of different parameters on reliability of grid-side converters based on varied junction temperature of devices in wind turbines, Proceedings of the CSEE, 33, 30, (2013)
  • [7] MUSALLAM M, JOHNSON C M., Real-time compact thermal models for health management of power electronics, IEEE Transactions on Power Electronics, 25, 6, (2010)
  • [8] BLACKBUM D L., Temperature measurements of semiconductor devices-a review [ C ], Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium, pp. 70-80, (2004)
  • [9] AVENAS Y, DUPONT L, KHATIR Z., Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters—a review, IEEE Transactions on Power Electronics, 27, 6, (2011)
  • [10] WANG Bo, HU An, TANG Yong, Junction temperature forecast and failure analysis of IGBT based on electro-thermal model, Electric Machines and Control, 16, 8, (2012)
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