Research Progress of Graphene Based Photodetectors Under Different Response Mechanisms

被引:0
|
作者
Zhang Y.-P. [1 ]
Wang X. [1 ]
Ji P.-X. [1 ]
Zhao J. [1 ]
Zhang K.-M. [1 ]
Li R. [1 ]
Yu K.-C. [1 ]
Tian H. [1 ]
Ma L. [1 ]
机构
[1] Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin
来源
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Graphene; Photodetector; Research progress; Response mechanism;
D O I
10.37188/CJL.20210359
中图分类号
学科分类号
摘要
Photodetectors are widely used in video imaging, optical communication, biomedical imaging and motion detection since their ability of converting optical signals to electrical signals. The limited performances of traditional photodetectors are mainly due to the intrinsic properties of materials which they are made of, therefore, it is pressingly needing to find new materials for developing new photodetectors with superior performances. In recent years, the emerging two-dimensional materials have provided a whole category of novel material platforms for fabricating higher-performance detectors. Among them, graphene is one of the most promising candidate material for the next generation high-performance photonics benefiting its unique electrical, optical and thermal properties. In this manuscript, we have systematically summarized the research progress and status on the graphene based photodetectors according to their light response mechanisms, and followed by a concise future prospect on different graphene photoelectric devices. © 2022, Science Press. All right reserved.
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页码:552 / 575
页数:23
相关论文
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  • [1] GOYKHMAN I, DESIATOV B, KHURGIN J, Et al., Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band, Opt. Express, 20, 27, pp. 28594-28602, (2012)
  • [2] VIVIEN L, OSMOND J, FEDELI J M, Et al., 42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide, Opt. Express, 17, 8, pp. 6252-6257, (2009)
  • [3] LIANG T, MILLER D A B, OKYAY A K, Et al., C-shaped nanoaperture-enhanced germanium photodetector, Opt. Lett, 31, 10, pp. 1519-1521, (2006)
  • [4] NUESE C J., Ⅲ-V alloys for optoelectronic applications, J. Electron. Mater, 6, 3, pp. 253-293, (1977)
  • [5] REN A B, YUAN L M, XU H, Et al., Recent progress of Ⅲ-V quantum dot infrared photodetectors on silicon, J. Mater. Chem. C, 7, 46, pp. 14441-14453, (2019)
  • [6] KIM C, YOO T J, CHANG K E, Et al., Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al<sub>2</sub>O<sub>3</sub> interfacial layer, Nanophotonics, 10, 5, pp. 1573-1579, (2021)
  • [7] LI L, PI L J, LI H Q, Et al., Photodetectors based on two-dimensional semiconductors: progress, opportunity and challenge, Chin. Sci. Bull, 62, 27, pp. 3134-3153, (2017)
  • [8] LI X H, LIN Y H, LIU X K., Advanced electronic and optoelectronic devices based on two dimensional material architecture, Guangdong Chem. Ind, 48, 9, pp. 133-135, (2021)
  • [9] ZHAO J H, SONG L Y, JI R B, Et al., Research progress of graphene in the field of photoelectric detection, Infrared Technol, 36, 8, pp. 609-616, (2014)
  • [10] PANDIT B, SCHUBERT E F, CHO J., Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure, Sci. Rep, 10, 1, (2020)