Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P bC center in various 4H-SiC(0001)/SiO2 interfaces

被引：0

作者：

Umeda, T. ^{[1
]}

Nakano, Y. ^{[1
]}

Higa, E. ^{[1
]}

Okuda, T. ^{[2
]}

Kimoto, T. ^{[2
]}

Hosoi, T. ^{[3
]}

Watanabe, H. ^{[3
]}

Sometani, M. ^{[4
]}

Harada, S. ^{[4
]}

机构：

[1] Institute of Applied Physics, University of Tsukuba, Tsukuba,305-8573, Japan

[2] Graduate School of Engineering, Kyoto University, Kyoto,615-8510, Japan

[3] Graduate School of Engineering, Osaka University, Osaka,565-0871, Japan

[4] National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba,305-8569, Japan

来源：

Journal of Applied Physics | 2020年 / 127卷 / 14期

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摘要：

Journal article (JA)

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[1] Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces
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[2] Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(0001 over bar )/SiO2 interfaces with wet oxidation
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