A 25-Gb/s high-sensitivity transimpedance amplifier with bandwidth enhancement

被引：0
|
作者：
Luo Z. [1 ,2 ]
Li J.-H. [2 ,3 ]
Chen F. [2 ]
Zhou Y. [2 ]
机构：
[1] College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou
[2] Xiamen Eochip Semiconductor Co., Ltd., Xiamen
[3] College of Computer and Information Sciences, Fujian Agriculture and Forestry University, Fuzhou
来源：
IEICE Electronics Express | 2021年 / 17卷 / 23期
基金：
国家重点研发计划;
关键词：
Bandwidth enhancement; Optical-electrical eye diagram; Sensitivity; Transimpedance amplifier;
D O I：
10.1587/ELEX.17.20200340
中图分类号：
学科分类号：
摘要：
A 25-Gb/s transimpedance amplifier (TIA) is proposed and realised in a 0.18-µm SiGe BiCMOS process. A series-peaking network and a shunt-peaking network are used to increase the bandwidth of the modified TIA. A gain boosting circuit is used to optimize the input-referred noise. The chip occupies an area of 0.8 mm2, and consumes 82 mW from a 3.3-V supply. The TIA transimpedance gain is ~ 4.5 K ohms. Bite error rate tests indicate that the sensitivity of the fabricated TIA is −13 dBm for a date rate of 25.78125-Gb/s (Bit error rate (BER) = 10−12, λ = 1310 nm, ER = 4.2 dB, and 0.8 A/W PD responsivity). Copyright © 2020 The Institute of Electronics, Information and Communication Engineers
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