Progress of GaAs Based High-power Semiconductor Lasers

被引：0
|
作者：
Zhang X. [1 ]
Dong H. [1 ]
Jia Z. [1 ]
Zhang A. [2 ]
Liang J. [3 ]
Xu B. [1 ,4 ]
机构：
[1] Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education, Taiyuan University of Technology, Taiyuan
[2] College of Textile Engineering, Taiyuan University of Technology, Taiyuan
[3] College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan
[4] Institute of Atomic and Molecular Science, Shaanxi University of Science & Technology, Xi'an
来源：
Cailiao Daobao/Materials Reports | 2022年 / 36卷 / 12期
基金：
中国国家自然科学基金;
关键词：
Beam quality; Electro-optic conversion efficiency; Gallium arsenide (GaAs); High-power semiconductor laser; Lifetime and reliability; Output power;
D O I：
10.11896/cldb.20100023
中图分类号：
学科分类号：
摘要：
After more than half a century of development of semiconductor laser, great achievements have been made in theory and practice. In recent years, GaAs based high-power semiconductor lasers have been widely used in many fields because of their advantages. However, GaAs based high-power semiconductor lasers still face the problems of insufficient power, high heat and poor beam quality. The key problem is poor photoelectric performances which limits its application. However, the challenge is how to further improve the overall optoelectronic performance of semiconductor lasers. Output power, electro-optic conversion efficiency, beam quality, lifetime and reliability are the most important parameters to evaluate the performances of semiconductor lasers. The electro-optic conversion efficiency directly affects the output power. Low conversion efficiency results in more heat, which leads to the increase of working temperature of the device. Lifetime and reliability will get worse obviously because of the deterioration of stability of the device. In recent years, with the improvement of epitaxial growth technology of GaAs based high-power semiconductor lasers, the optimization of the theoretical level of laser device structure design and the improvement of packaging technology, the output power and electro-optic conversion efficiency of semiconductor lasers have been greatly improved. From 2007 to 2017, the output power of single tube edge emitting laser diode increases from 14.7 W to 33 W. The output power of single tube optical pumped surface emitting laser diode reached 72 W in 2018. The electro-optic conversion efficiency of single tube laser diode has reached 74.6% in 2020. With the improvement of high efficient cooling technology, the lifetime of semiconductor lasers has reached more than a million hours. In this paper, the development status of GaAs based semiconductor laser in recent years was mainly introduced. Current development status quo of the extensional structure, output power, electro-optic conversion efficiency, beam quality, lifetime and reliability were summarized. The various factors that affect the output power and their current solution were discussed. The development trend of semiconductor laser was prospected. © 2022, Materials Review Magazine. All right reserved.
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