Measuring complex for determining the characteristics of high-voltage silicon carbide Schottky diodes in impulse modes

被引：0

作者：

Zotin V.F. ^{[1
]}

Drakin A.Yu. ^{[1
]}

Rybalka S.B. ^{[1
]}

Demidov A.A. ^{[1
]}

Kulchenkov E.A. ^{[1
]}

机构：

[1] Bryansk State Technical University, 7 50 let Oktyabrya blwd., Bryansk

来源：

Applied Physics | 2021年 / 06期

关键词：

Measurements in electric characteristics in impulse modes; Schottky diode; Silicon carbide;

D O I：

10.51368/1996-0948-2021-6-67-73

中图分类号：

学科分类号：

摘要：

This paper describes a developed automated research measuring complex that allows one to determine the parameters of currents, voltages and power of silicon carbide Schottky diodes when applied reverse voltage impulses with amplitudes from 400 to 1000 V. The research measuring complex was tested on DDSH411A91 («GRUPPA KREMNY EL») and C3D1P7060Q (Cree/Wolfspeed) silicon carbide Schottky diodes and allows to determine their maximum values of the rate of rise of reverse voltage dV/dt (877 V/ns and 683 V/ns). Also, the maximum values of the current rise rate dI/dt were determined for DDSH411A91 (3.24 A/ns) and C3D1P7060Q (3.72 A/ns) diodes. For the first time it was established that, when a reverse voltage impulse with an amplitude of 1000 V is applied, the maximum values of instantaneous fullpower reach 1419 VA for the DDSH411A91 diode and 1638 VA for the C3D1P7060Q diode. © 2021 Federal Informational-Analytical Center of the Defense Industry. All rights reserved.

引用

页码：67 / 73

页数：6

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