Research on Switching Losses Testing Method for SiC MOSFET

被引:0
|
作者
Zheng D. [1 ]
Zhang S. [1 ]
Li L. [1 ,2 ]
Cao H. [1 ,2 ]
Fan T. [1 ,3 ]
Ning P. [1 ,3 ]
Zhang J. [1 ,3 ]
Wen X. [1 ,2 ]
机构
[1] Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering of Chinese Academy of Sciences, Hadian District, Beijing
[2] University of Chinese Academy of Sciences, Shijingshan District, Beijing
[3] Beijing Collaborative Innovation Center for Electric Vehicles, Hadian District, Beijing
来源
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 09期
关键词
Delay compensation; Oscillation; Silicon carbide (SiC) metal-oxide- semiconductor (MOSFET); Switching losses;
D O I
10.13334/j.0258-8013.pcsee.190716
中图分类号
学科分类号
摘要
Accurate measurement of MOSFETs switching losses are a prerequisite for SiC MOSFETs evaluating, driver circuit optimizing and losses reducing. The traditional double pulse test has problems of measuring delay and high frequency oscillation due to the fast switching speed of SiC MOSFETs, thus the switching losses evaluation is more difficult in SiC MOSFETs than in Si IGBTs. Firstly, based on the analysis of ideal model switching sequence, a delay calibration method was proposed. Then the method was improved in the real model considering the influence of parasitic parameters. Secondly, high-frequency oscillation during the switching transient was presented, and a method for calculating the additional switching losses generated by the high-frequency oscillation was proposed. The drive circuit parameters were determined according to total switching losses. Finally, a self-packaged SiC MOSFET module was used to evaluate the method. The design methods were applied to a motor drive controller and compared with the Si IGBT controller on the same power rating, which proved the validity and practicability of the presented method. © 2020 Chin. Soc. for Elec. Eng.
引用
收藏
页码:2975 / 2982
页数:7
相关论文
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