Modeling of TSV-Based 3-D Heterogeneous Solenoid Inductor with High Inductance Value

被引：0

作者：

Su J. ^{[1
]}

Wang H. ^{[1
]}

Dou H. ^{[2
]}

Chen X. ^{[1
]}

机构：

[1] School of Physics and Electronic Engineering, Shanxi University, Shanxi

[2] School of Information Engineering, Shanxi Vocational University of Engineering Science and Technology, Jinzhong

来源：

Progress in Electromagnetics Research Letters | 2023年 / 112卷

基金：

中国国家自然科学基金;

关键词：

This work was supported the National Natural Science Foundation of China (62071282) and the Fundamental Research Program of Shanxi Province (202203021211295);

D O I：

10.2528/PIERL23071804

中图分类号：

学科分类号：

摘要：

In this letter, a novel 3-D heterogeneous solenoid inductor with high inductance value is proposed. By adding planar spiral structure at the ends of through-silicon vias (TSVs) of typical 3-D solenoid inductor, the heterogeneous solenoid is formed. The total inductance is increased by more than 41% compared with that of typical solenoid inductor of the same size. Additionally, an accurate analytical model of the inductor is established considering all the factors including angle and offset. Q3D simulation results verified the accuracy of the model, and the percentage error is less than 5.38%. This work provides an important reference for inductor designers to quickly estimate inductance value, configuration, and layout area. © 2023, Electromagnetics Academy. All rights reserved.

引用

页码：111 / 118

页数：7

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