Study on large-area array SW HgCdTe infrared focal plane device

被引：0

作者：

Gong X. ^{[1
]}

Li H. ^{[1
]}

Yang C. ^{[1
]}

Yuan S. ^{[1
]}

Feng Y. ^{[1
]}

Huang Y. ^{[1
]}

Hu X. ^{[1
]}

Li L. ^{[1
]}

机构：

[1] Kunming Institute of Physics, Kunming

来源：

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2022年 / 51卷 / 09期

关键词：

2; k; infrared focal plane device; large area array; short wave;

D O I：

10.3788/IRLA20220079

中图分类号：

学科分类号：

摘要：

With the development of infrared focal plane technology, large-area infrared focal plane devices have been widely used in remote sensing, meteorology, resource surveys and high-resolution earth observation satellites. Therefore, based on the third-generation infrared focal plane technology ultra-large-scale focal plane devices are called research hotspots at home and abroad. The short wave (SW) 2 k (18 μm, pixel pitch) mercury cadmium telluride(MCT) infrared focal plane device was reported, which was successfully developed by Kunming Institute of Physics using n-on-p technology. The SW 2 k MCT infrared focal plane device has broken through the preparation of large-size cadmium zinc telluride (CdZnTe) substrates and the growth of large-area liquid phase epitaxy thin film materials. The substrate size was increased from Φ75 mm to Φ90 mm, and a highly uniform large-area Mercury Cadmium Telluride (HgCdTe) thin film material was obtained. By tackling key technologies such as large array device technology and large area array flip-chip interconnect, a high-performance SW 2 k×2 k (18 μm) MCT infrared focal plane device with an operability over 99.9%, average peak detection rate (D*) greater than 4×1012 (cm·Hz1/2)/W and dark current density of 1 nA/cm2 was finally obtained. © 2022 Chinese Society of Astronautics. All rights reserved.

引用

共 12 条

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