Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal

被引：4

作者：

Gupta, Gaurav ^{[1
]}

Jozwik, Przemyslaw ^{[2
]}

Ojha, Sunil ^{[3
]}

Umapathy, G. R. ^{[3
]}

Pandey, Akhilesh ^{[4
]}

Rath, Shyama ^{[1
]}

机构：

[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

[2] Natl Ctr Nucl Res, Soltana 7, PL-05400 Otwock, Poland

[3] Inter Univ Accelerator Ctr, Aruna Asaf Ali Marg, New Delhi 110016, India

[4] DRDO, Solid State Phys Lab, Timarpur 110007, Delhi, India

来源：

APPLIED SURFACE SCIENCE | 2024年 / 665卷

关键词：

Ion implantation; Silicon carbide; HR-XRD; RBS; Randomly displaced atoms; Debye-Waller factor; Strain; SILICON-CARBIDE; DAMAGE; 4H; ACCUMULATION;

D O I：

10.1016/j.apsusc.2024.160296

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The ion implantation-induced disorder and strain in 4H-SiC implanted with 200 keV Si ions and its subsequent recrystallization by thermal annealing are investigated. The concentration of randomly displaced atoms (RDA) are determined from Rutherford Backscattering Spectroscopy in channeling geometry. The depth profiles of strain and the crystalline quality are assessed through the Debye-Waller factor determined from simulations the High-Resolution X-Ray Diffraction patterns. Raman spectroscopic measurements support the ion-induced crystalline to amorphous transitions and the recrystallization upon annealing.

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页数：8

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