Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials

被引：0

作者：

Park, Junbum ^{[1
]}

Pala, Marco ^{[1
]}

Saint-Matin, Jerome ^{[1
]}

机构：

[1] Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, Palaiseau, France

来源：

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 2023年

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摘要：

Boron nitride - Density functional theory - III-V semiconductors - Intelligent systems - Interfaces (materials) - Phonons - Stochastic systems - Thermodynamic properties

引用

页码：21 / 24