共 50 条
- [31] InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03): : 1020 - 1022
- [33] GaN-Based Light-Emitting-Diode With a p-InGaN Layer JOURNAL OF DISPLAY TECHNOLOGY, 2014, 10 (03): : 204 - 207
- [34] Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes Journal of Electronic Materials, 2002, 31 : 313 - 315