Erratum: A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films (Appl. Phys. Lett. (2022) 120 (022901) DOI: 10.1063/5.0078106)

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作者：
Lancaster, S. [1 ]
Mikolajick, T. [1 ,2 ]
Slesazeck, S. [1 ]
机构：
[1] NaMLab GGmbH, Nöthnitzer Str. 64a, Dresden,01187, Germany
[2] Department of Nanoelectronics, TU Dresden, Nöthnitzer Str. 64, Dresden,01187, Germany
来源：
Applied Physics Letters | 2022年 / 120卷 / 04期
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