Ellipsometric measurement of subsurface damaged layer thickness and refractive index of sapphire substrates

被引:0
作者
Cui C. [1 ]
Li H. [1 ]
Chen X. [1 ]
Zhou Z. [1 ,2 ]
Hu Z. [1 ]
机构
[1] Institute of Manufacturing Engineering, Huaqiao University, Xiamen
[2] Quanzhou Sanan Semiconductor Technology Co., Ltd., Quanzhou
来源
Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument | 2023年 / 44卷 / 07期
关键词
damaged layer; refractive index; sapphire substrate; spectroscopic ellipsometry; thickness;
D O I
10.19650/j.cnki.cjsi.J2311094
中图分类号
学科分类号
摘要
To quantitatively measure the thickness d and refractive index n of the damage layer on sapphire substrate produced during chemical mechanical polishing, a spectral ellipsometric method is proposed. First, the change of spectral polarization state (i. e., amplitudes ratio and phases difference) of light (from 250 to 1 650 nm) reflected on sapphire substrate is measured. Then, the thickness and refractive index of damaged layer are extracted by optical modeling and inversion of measured data. The d and n of substrates polished by Al2O3 and SiO2 abrasives are measured. The d of the former fluctuates with the better result about 1. 4 nm after 40 min, and the latter continues decreasing with the better result 1 nm after 20 min. The n produced by two abrasives is both smaller than that of sapphire crystal. Meanwhile, the experiment and simulation analysis indicate that the change of phase difference is similar with d, which can be used to quickly evaluate the change of damage layer thickness because of no requirements for modelling and inversion. Therefore, the proposed method can be utilized to monitor the machining process as a nondestructive optical way. © 2023 Science Press. All rights reserved.
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页码:37 / 43
页数:6
相关论文
共 24 条
  • [1] JUNG I, SONG S, CHOI M, Et al., Evolution of mechanically formed bow due to surface waviness and residual stress difference on sapphire (0001) substrate, Journal of Materials Processing Technology, 269, pp. 102-108, (2019)
  • [2] KHATTAK C P, SHETTY R, SCHWERDTFEGER C R, Et al., World′s largest sapphire for many applications, Journal of Crystal Growth, 452, pp. 44-48, (2016)
  • [3] ZHOU Y, PAN G SH, GONG H, Et al., Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms [ J], Colloids and Surfaces. A, Physicochemical and Engineering Aspects, 513, pp. 153-159, (2017)
  • [4] YIN SH H, WANG Y Q, LI Y P, Et al., Experimental study on magnetorheological chemical polishing for sapphire substrate, Journal of Mechanical Engineering, 52, 5, pp. 80-87, (2016)
  • [5] GAN Y, ZHANG F H., Review on formation mechanism of chemical reaction layer during chemical mechanical polishing of monocrystalline SiC and sapphire substrates, Science China Press, 61, 36, pp. 3930-3939, (2016)
  • [6] YUAN J L, CUI L F, ZHANG R Y, Et al., Research on nanoprocessing technology of sapphire single crystal, Chinese Journal of Scientific Instrument, 16, 1, pp. 187-192, (1995)
  • [7] ZHANG ZH Y, LIU J, HU W, Et al., Chemical mechanical polishing for sapphire wafers using a developed slurry [ J ], Journal of Manufacturing Processes, 62, pp. 762-771, (2021)
  • [8] WANG X, LEI H, CHEN R L., CMP behavior of alumina/ metatitanic acid core-shell abrasives on sapphire substrates, Precision Engineering, 50, pp. 263-268, (2017)
  • [9] LUO Q F, LU J, XU X P, Et al., Removal mechanism of sapphire substrates (0001, 11 0 and 10 0) in mechanical planarization machining [ J ], Ceramics International, 43, 18, pp. 16178-16184, (2017)
  • [10] FUJIWARA H., Spectroscopic ellipsometry: Principles and applications [ M], (2007)