Effect of Heat Flux on Solid-Liquid Interface Shape during GaAs Crystal Growth with Vertical Gradient Freeze Method

被引：0

作者：

Bian Y. ^{[1
]}

Zheng A. ^{[1
]}

Lin Q. ^{[1
]}

Long B. ^{[1
]}

Zhang T. ^{[1
]}

机构：

[1] GRINM Electro-Optic Materials Co., Ltd., General Reserch Institute for Nonferrous Metals, Beijing

来源：

Xiyou Jinshu/Chinese Journal of Rare Metals | 2019年 / 43卷 / 10期

关键词：

Electrical uniformity; GaAs; Numerical simulation; Solid-liquid interface; Vertical gradient freeze;

D O I：

10.13373/j.cnki.cjrm.XY17050019

中图分类号：

学科分类号：

摘要：

Professional crystal growth simulation software CGSim was used to simulate the solid-liquid interface shape and its variation during the GaAs crystal growth process grown by Vertical Gradient Freeze (VGF). The heat flux and its variation of different positions on solid-liquid interface were analyzed, and then with the use of energy conservation relation, the effect of temperature gradient on the shape of solid-liquid interface was analyzed, which improved the mathematical relationship between the interface shape and the temperature field deduced by predecessors based on ignoring solidification latent heat. The results showed that the difference of heat flux of different points on interface resulted in the different growth rates on different points, which formed the shape of solid-liquid interface with different deflections. Hall Effect Measurement was used to test the distribution of carrier concentration on GaAs crystal. Under this method, the effect of interface shape on electrical uniformity of crystal wafers was analyzed. The result showed that for the solute of which the separation coefficient k0 was less than 1, the distribution of carrier concentration was more uniform on the wafers with a flat shape interface, and the carrier concentration increased with the increase of radial distance for the convex shape interface while it was opposite to the concave shape interface. The distribution of carrier concentration on a wafer was more heterogeneous with the increase of deflection of solid-liquid interface. © Editorial Office of Chinese Journal of Rare Metals. All right reserved.

引用

页码：1068 / 1074

页数：6

共 15 条

[1]

Zhou C.F., Lan T.P., Sun Q., GaAs materials: a review of technological development and market demands, Tianjin Science & Technology, 42, 3, (2015)

[2]

Hua Q., Development trend and market application of gallium arsenide GaAs & gallium nitride GaN material, Application of IC, 2, (2016)

[3]

Zhao Q.Y., An overview of the development of GaAs materials, Electronic Test, 18, (2016)

[4]

Tower J.P., Tobin R., Pearah P.J., Ware R.M., Interface shape and crystallinity in LEC GaAs, Journal of Crystal Growth, 114, 4, (1991)

[5]

Zhou C.F., Lan T.P., Zhou C.X., Research of inhibition p type germanium crystal dislocation by vertical gradient freeze technique, Semiconductor Technology, 41, 2, (2016)

[6]

Li Y.R., Li X.L., Sun T.X., Sun N.F., Study of the twin crystallite phenomenon in LEC-InP crystal, Semiconductor Technology, 40, 4, (2015)

[7]

Dai X., Wang Y.M., Mao K.L., Wang L.Z., Xu W., Li B., Effect of the growth interface shape on the resistivity in V-doped SiC crystal, Equipment for Electronic Products Manufacturing, 45, 6, (2016)

[8]

Jin M., Xu J.Y., He Q.B., Growth of GaAs crystal using for solar cells by Bridgman method, Journal of Synthetic Crystals, 43, 4, (2014)

[9]

Tu F., Su X.P., Tu H.L., Zhang F.Y., Ding G.Q., Wang S.A., Numerical simulation technology studying thermal stress in the 10 cm VGF-GaAs single crystal growth, Infrared and Laser Engineering, 39, 3, (2010)

[10]

Han J.C., Li C.Q., Zhang M.F., Zuo H.B., Meng S.H., Yao T., Single crystal Horizontal Bridgman method, Materials Review, 20, 7, (2006)

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