Surface gloss analysis of GaAs-based epitaxial films

被引：0
|
作者：
Bekaldiev E.A. [1 ]
Pushkarev S.S. [1 ,2 ]
Klimov E.A. [2 ,3 ]
Mozhaeva M.O. [3 ]
机构：
[1] MIREA – Russian Technological University, 78 Vernadsky Ave., Moscow
[2] Mokerov Institute of Ultra High Frequency Semiconductor Electronics of Russian Academy of Sciences, Bd., 5, 7 Nagornyi proezd, Moscow
[3] Orion R&P Association, JSC, 9 Kosinskaya st., Moscow
来源：
Applied Physics | 2023年 / 04期
关键词：
atomic-force microscopy; GaAs; molecular-beam epitaxy; reflection coefficient; root-mean-square roughness;
D O I：
10.51368/1996-0948-2023-4-22-28
中图分类号：
学科分类号：
摘要：
A correlation between the coefficient of specular light reflection from the surface of InGaAs epitaxial films with low In average content and the root-mean-square roughness of their surface was found. The specular reflection coefficient was determined using a glossmeter, and the surface morphology was measured by atomic force microscopy. The films under investigation were grown by molecular beam epitaxy on GaAs substrates with different surface orientations: (100), (110), (111)А. © 2023 Federal Informational-Analytical Center of the Defense Industry. All rights reserved.
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页码：22 / 28
页数：6
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